tlp627,tlp627-2,TLP627-4 1 2002-06-24 toshiba photocoupler gaas ired & photo-transistor tlp627,tlp627-2,TLP627-4 programmable controllers dc-output module telecommunication the toshiba tlp627,-2 and -4 consists of a gallium arsenide infrared emitting diode optically coupled to a darlington connected phototransistor which has an integral base-emitter resistor to optimize switching speed and elevated temperature characteristics. the tlp627-2 offers two isolated channels in a eight lead plastic dip, while the TLP627-4 provide four isolated channels per package. collector-emitter voltage : 300v(min) current transfer ratio : 1000%(min) isolation voltage : 5000vrms(min) ul recognized : ul1577,file no.e67349 made in japan made in thailand ul recognized e67349 *1 e152349 *1 bsi approved 7426, 7427 *2 7426, 7427 *2 * 1 ul1577 *2 bs en60065 : 1994,bs en60950: 1992 1: anode 2: cathode 3: emitter 4:collector 1 2 3 4 tlp627 1 2 3 4 5 6 7 8 tlp627-2 1,3: anode 2,4: cathode 5,7: emitter 6,8:collector 1 2 3 4 5 6 7 8 TLP627-4 9 10 11 12 13 14 15 16 1,3,5,7 : anode 2,4,6,8 : cathode 9,11,13,15 : emitter 10,12,14,16 :collector pin configuration (top view) toshiba 11 ? 5b2 weight: 0.26 g toshiba 11 ? 10c4 weight: 0.54 g toshiba 11 ? 20a3 weight: 1.1 g unit in mm
tlp627,tlp627-2,TLP627-4 2 2002-06-24 maximum ratings (ta=25c) rating characteristic symbol tlp627 tlp627-2 TLP627-4 unit forward current i f 60 50 ma forward current derating ? i f /c ? 0.7(ta 39c) ? 0.5(ta 25c) ma /c pulse forward current i fp 1(100s pulse,100pps) a power dissipation (1 circuit) p d 100 70 mw power dissipation derating (ta 25c,1 circuit) ? p d /c -1.0 -0.7 mw /c reverse voltage v r 5 v led junction temperature tj 125 c collector-emitter voltage v ceo 300 v emitter -collector voltage v eco 0.3 v collector current i c 150 ma collector power dissipation (1 circuit) p c 150(*300) 100 mw collector power dissipation derating (ta 25c,1 circuit) ? p c /c -1.5(*-3.5) -1.0 mw /c detector junction temperature t j 125 c operating temperature range t opr ? 55~100 c storage temperature range t stg ? 55~125 c lead soldering temperature (10s) t sold 260(10sec) c total package power dissipation p t 250(*320) 150 mw total package power dissipation derating (ta 25c,1 circuit) ? p t /c -2.5(*-3.2) -1.5 mw /c isolation voltage (ac,1min. , r.h. 60%) (note1) bv s 5000 v r m s *if=20ma max (note1)device considered a two terminal device : led side pins shorted together and detector side pins shorted together. recommended operating conditions characteristic symbol min. typ. max. unit supply voltage v cc ? ? 200 v forward current i f ? 16 25 ma collector current i c ? ? 120 ma operating temperature t opr ? 25 ? 85 c
tlp627,tlp627-2,TLP627-4 3 2002-06-24 individual electrical characteristics (ta=25c) characteristic symbol test condition min. typ. max. unit forward voltage v f i f = 10 ma 1.0 1.15 1.3 v reverse current i r v r = 5 v ? ? 10 a led capacitance c t v = 0 , f=1mhz ? 30 ? pf collector-emitter breakdown voltage v (br)ceo ic = 0.1ma 300 ? ? v emitter-collector breakdown voltage v (br)eco ie = 0.1ma 0.3 ? ? v v ce = 200v ? 10 200 na collector dark current i ceo v ce = 200v , ta = 85c ? ? 20 a detector capacitance collector to emitter c ce v=0 , f=1mhz ? 10 ? pf coupled electrical characteristics (ta=25c) characteristic symbol test condition min. typ. max. unit current transfer ratio i c /i f i f =1ma , v ce =1v 1000 4000 ? % saturated ctr i c /i f (sat) i f =10ma , v ce =1v 500 ? ? % i c =10ma , i f =1ma ? ? 1.0 collector-emitter saturation voltage v ce (sat) i c =100ma , i f =10ma 0.3 ? 1.2 v isolation electrical characteristics (ta=25c) characteristic symbol test condition min. typ. max. unit capacitance input to output c s v s =0 , f=1mhz ? 0.8 ? pf isolation resistance r s v s =500v , r.h. 60% 5 10 10 10 14 ? ac, 1minute 5000 ? ? ac, 1second, in oil ? 10000 ? vrms isolation voltage bvs dc, 1 minute, in oil ? 10000 ? vdc
tlp627,tlp627-2,TLP627-4 4 2002-06-24 switching characteristics (ta=25c) characteristic symbol test condition min. typ. max. unit rise time tr ? 40 ? fall time tf ? 15 ? turn-on time ton ? 50 ? turn-off time toff v cc =10v i c =10ma r l =100 ? 15 ? turn-on time ton ? 5 ? strage time ts ? 40 ? turn-off time toff r l =180 (fig.1) v cc =10v , i f =16ma ? 80 ? s fig.1 switching time test circuit rl vcc vce if ton ts toff 9v 1v if vce vcc
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tlp627,tlp627-2,TLP627-4 8 2002-06-24 toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. gallium arsenide (gaas) is a substance used in the products described in this document. gaas dust and fumes are toxic. do not break, cut or pulverize the product, or use chemicals to dissolve them. when disposing of the products, follow the appropriate regulations. do not dispose of the products with other industrial waste or with domestic garbage. the products described in this document are subject to the foreign exchange and foreign trade laws. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others. the information contained herein is subject to change without notice. 000707ebc restrictions on product use
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